Memory - NAND & DRAM Subscription

DRAM Functional Analysis (MFR)

Includes:

• Executive summary supported with image sets
  • Process node and foundry identification
  • Critical dimensions
  • Functional block summary
  • Stacked optical top metal and poly die photo delivered in CircuitVision. Includes calibrated measurement and annotations tools
  • SEM cross-sectional and bevel imaging
  • 13-15 reports/year

DRAM: SWD and Sense Amp Transistor Characterization

Includes:

• Transitor Characterization Report (TCR)
  • Universal curves for IOFF vs. ION and IOFF vs. ID, LIN derived from
    • 5 NMOS and 5 PMOS sub wordline driver transistors, across multiple VDD at 85°C
    • 5 NMOS and 5 PMOS sense amp transitors, across multiple VDD at 85°C
  • For each universal curve data point
    • Transistor Characteristics: I_D, _SAT, I_D, _Lin, I_off, V_T, _Lin & V_T, _SAT, ΔV_GS, G_m, SS, DIBL
    • Output Characteristics
• Analysis Coverage
  • 4 reports/year
  • Trend Analysis
  • 4 hrs support

DRAM Periphery Design (MDP): Sense Amp, Sub Wordline Driver

Includes:

• Concise analyst's summary of critical device metrics
  • Circuit schematic diagram of sense amplifier
  • Circuit schematic diagram of a sub wordline driver
  • Detailed stacked SEM images of a delayered DRAM sense amplifier and sub wordline driver delivered in CircuitVision. Includes calibrated measurement and annotation tools
  • ~4 reports/year

DRAM: Circuit Analysis

Includes:

• Full Circuit Analysis
  • 1 - Memory Array and Peripherals
  • 2 - Address Path
  • 3 - Data Path
  • 4 - Control Blocks, Configuration and Test Block
  • 5 - Voltage Generators System
• Analysis Coverage
  • Full 2/year

NAND Functional Analysis

Includes:

• Analysis Coverage
  • Executive summary supported with image sets
    • Process Node and Foundry Identification
    • Critical Dimensions
    • Functional Block Summary
    • Stacked optical top metal and poly die photo delivered in CircutVision which includes calibrated measurement tools
    • SEM cross-sectional imaging
  • 13-15 reports/year

NAND Periphery Design (MDP): Page Buffer, Wordline Driver

Includes:

• Concise analyst's summary of critical device metrics
  • Circuit schematic diagram of a page buffer: decoder, switch, and controller
  • Circuit schematic diagram of a wordline driver: decoder and switch
  • Detailed stacked plan view SEM images of a beveled NAND page buffer and wordline driver delivered in CircuitVision. CircuitVision includes calibrated measurement and annotation tools
  • ~4 reports/year

NAND: Circuit Analysis

Includes:

• Full Circuit Analysis
  • 1 - Memory Array and Peripherals
  • 2 - Address Path
  • 3 - Data Path
  • 4 - Control Blocks, Configuration and Test Block
  • 5 - Voltage Generators System
• Analysis Coverage
  • Full 2/year

NAND Internal Waveform Analysis

This channel examines the waveforms used on NAND memory cells during program, read and erase cycles.

• Delivers 8 reports over a 12-month period as well as an online seminar
• Provides a Waveform summary PDF and raw waveform .sht files to enable the customer to perform further analysis and measurements

Advanced Process

Includes:

• Advanced Memory Essentials (AME)
  • Focused on leading edge NAND and DRAM memory technology
  • Executive summary supported by large image sets
  • SEM cross-sectional and bevel imaging
  • TEM cross-sectional analysis with TEM EDS
  • 8 reports/year
• Analysis Coverage
  • Technical trend/roadmap by technology element
  • Design technology interaction analysis
  • Detailed explanation of process integrations
  • Next node predictions
  • 3 briefings/year
  • Trend analysis
  • Forecasting
  • 1 annual seminar
  • 4 hrs support

Process Flows

*Requires Advanced Process Subscription
Includes:

• Process Flow Analysis (PFA)
  • Spreadsheets showing process, architecture, mask list, and integration-level process steps
  • 8 Memory / year
• Process Flow Full Emulation (PFF)
  • PFA content may be updated
  • Layout GDS fully decomposed into process layers
  • 3D Emulation
  • Synopsys Input (Route-Level Deck)*
    *Requires Synopsys license to view and modify
  • 6 Memory / year
• Analysis Coverage
  • Cell Design technology interaction analysis
  • Detailed explanation of process integration from wafer-in through wafer-out
  • Process steps, materials, equipment type, unit process
  • SEM and TEM cross-sectional and top-view images
  • Layer annotations, specific process module, assumption
  • Trend analysis
  • +4 hrs support

NAND Transistor Characterization

Includes:

• 4 NAND devices analyzed per year
• Cross-technology analysis and 4 hours support per year
• 10 types of transistors characterized at 85°C for each NAND device

• Transistor types:
  1. Peripheral High Voltage(HV) CSL Driver Transistor
  2. Page Buffer HV BLSLT NMOS Transistor
  3. Page Buffer HV BLGIDL NMOS Transistor
  4. XDEC NMOS Pass Transistor
  5. XDEC HV Depletion Transistor
  6. XDEC HV PMOS Transistor
  7. Page Buffer Mid Gox NMOS Transistor
  8. Page Buffer Mid Gox PMOS Transistor
  9. I/O Mid Gox NMOS Transistor
  10. I/O Mid Gox PMOS Transistor
• Test results for each transistor type will includes plots for: Transfer function, Output function, Body effect, Breakdown voltage, Transconductance (gm), Threshold voltage (VT), and Subthreshold swing (SS).
• Raw data files for all measured transistors will be included.